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RU75110Q - N-Channel Advanced Power MOSFET

Description

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① ID

Features

  • 75V/110A, RDS (ON) =5.5mΩ(Typ. )@VGS=10V.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU75110Q
Manufacturer Ruichips
File Size 271.87 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU75110Q Datasheet

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RU75110Q N-Channel Advanced Power MOSFET Features • 75V/110A, RDS (ON) =5.5mΩ(Typ.
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