Datasheet4U Logo Datasheet4U.com

RU6888R3 - N-Channel Advanced Power MOSFET

Description

Insulation Slug SDG TO220S D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat

Features

  • 68V/88A, RDS (ON) =6mΩ(Typ. )@VGS=10V.
  • Insulation Slug(VISO≥1500VAC).
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet Details

Part number RU6888R3
Manufacturer Ruichips
File Size 470.86 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6888R3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RU602B N-Channel 60V MOSFET VBsemi
RU6055 Sensors ifm
RU6199 N-Channel Advanced Power MOSFET Ruichips Semiconductor

Other Datasheets by Ruichips

Part Number Description
RU6888R N-Channel Advanced Power MOSFET
RU6888 N-Channel Advanced Power MOSFET
RU6888M N-Channel Advanced Power MOSFET
RU6888S N-Channel Advanced Power MOSFET
RU6881R N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU6888R3 N-Channel Advanced Power MOSFET Features • 68V/88A, RDS (ON) =6mΩ(Typ.
Published: |