Datasheet4U Logo Datasheet4U.com

RU6888M - N-Channel Advanced Power MOSFET

Description

PDFN5060 Applications

Power Management.

Features

  • 60V/62A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Datasheet Details

Part number RU6888M
Manufacturer Ruichips
File Size 301.06 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6888M Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RU602B N-Channel 60V MOSFET VBsemi
RU6055 Sensors ifm
RU6199 N-Channel Advanced Power MOSFET Ruichips Semiconductor

Other Datasheets by Ruichips

Part Number Description
RU6888 N-Channel Advanced Power MOSFET
RU6888R N-Channel Advanced Power MOSFET
RU6888R3 N-Channel Advanced Power MOSFET
RU6888S N-Channel Advanced Power MOSFET
RU6881R N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU6888M N-Channel Advanced Power MOSFET Features • 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description PDFN5060 Applications • Power Management. Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips Semiconductor Co., Ltd Rev. A– DEC.
Published: |