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RU30L30M3 - P-Channel Advanced Power MOSFET

Description

PIN1 S SG S D D DDD SDFN3030 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large

Features

  • -30V/-30A, RDS (ON) =12mΩ(Typ. )@VGS=-10V RDS (ON) =20mΩ(Typ. )@VGS=-4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • 100% Avalanche Tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU30L30M3
Manufacturer Ruichips
File Size 366.41 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU30L30M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU30L30M3 P-Channel Advanced Power MOSFET Features • -30V/-30A, RDS (ON) =12mΩ(Typ.)@VGS=-10V RDS (ON) =20mΩ(Typ.)@VGS=-4.
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