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RU30L30M - P-Channel Advanced Power MOSFET

Description

PDFN3333 Applications Power Management Load Switching Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperatur

Features

  • -30V/-30A, RDS (ON) =12mΩ(Typ. )@VGS=-10V RDS (ON) =20mΩ(Typ. )@VGS=-4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RU30L30M
Manufacturer Ruichips
File Size 266.96 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU30L30M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU30L30M P-Channel Advanced Power MOSFET MOSFET Features • -30V/-30A, RDS (ON) =12mΩ(Typ.)@VGS=-10V RDS (ON) =20mΩ(Typ.)@VGS=-4.
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