Datasheet Details
| Part number | RU30120S |
|---|---|
| Manufacturer | Ruichips |
| File Size | 302.41 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
 RU30120S Datasheet
|
|
|
General Description
D
G S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
I
Key Features
- 30V/120A, RDS (ON) =2.5mΩ(Typ. )@VGS=10V RDS (ON) =3.3mΩ(Typ. )@VGS=4.5V.
- Super High Dense Cell Design.
- Ultra Low On-Resistance.
- 100% Avalanche Tested.
- Lead Free and Green Devices Available (RoHS Compliant).