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RU30120L - N-Channel Advanced Power MOSFET

General Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Lar

Key Features

  • 30V/120A, RDS (ON) =2.5mΩ (Typ. ) @ VGS=10V RDS (ON) =3.3mΩ (Typ. ) @ VGS=4.5V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU30120L
Manufacturer Ruichips
File Size 273.90 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU30120L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU30120L N-Channel Advanced Power MOSFET MOSFET Features • 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.