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RU2H50Q
N-Channel Advanced Power MOSFET
MOSFET
Features
• 200V/60A, RDS (ON) =34mΩ (Type) @ VGS=10V
• Low Gate Charge • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lead Free,RoHS compliant
Pin Description
TO-247
Applications
• Switching Application
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=
RU2H50Q Datasheet
