Datasheet4U Logo Datasheet4U.com

RU2H30Q - N-Channel Advanced Power MOSFET

Description

TO-220 TO-220F TO-263 TO-247 Applications Switching Application Systems DC/DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junctio

Features

  • 200V/30A, RDS (ON) =75mΩ (Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available Pin.

📥 Download Datasheet

Datasheet Details

Part number RU2H30Q
Manufacturer Ruichips
File Size 430.25 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU2H30Q Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RU2H50R N-Channel MOSFET INCHANGE
RU2 Fast-Recovery Rectifier Diodes Sanken electric
RU2 Silicon And Fast Recovery Rectifiers WEJ
RU2 FAST RECOVERY RECTIFIER DIODES EIC
RU20A FAST RECOVERY RECTIFIER DIODE EIC

Other Datasheets by Ruichips

Part Number Description
RU2H30R N-Channel Advanced Power MOSFET
RU2H30S N-Channel Advanced Power MOSFET
RU2H15S N-Channel Advanced Power MOSFET
RU2H50Q N-Channel Advanced Power MOSFET
RU2H50R N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU2H30Q N-Channel Advanced Power MOSFET MOSFET Features • 200V/30A, RDS (ON) =75mΩ (Typ.
Published: |