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RU1HP60R - P-Channel Advanced Power MOSFET

Description

G DS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① ID

Features

  • -100V/-60A, RDS (ON) =18mΩ(Typ. )@VGS=-10V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU1HP60R
Manufacturer Ruichips
File Size 315.06 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU1HP60R Datasheet

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Full PDF Text Transcription

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RU1HP60R P-Channel Advanced Power MOSFET Features • -100V/-60A, RDS (ON) =18mΩ(Typ.
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