Datasheet4U Logo Datasheet4U.com

RU1H100R - N-Channel Advanced Power MOSFET

Description

TO-220 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat S

Features

  • 100V/75A RDS (ON)=11mΩ(Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Extremely high dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.

📥 Download Datasheet

Datasheet Details

Part number RU1H100R
Manufacturer Ruichips
File Size 284.89 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1H100R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RU1 Fast-Recovery Rectifier Diodes Sanken electric
RU1 FAST RECOVERY RECTIFIER DIODES EIC
RU1890B04 RF Module Samsung
RU1890B04GCA RF Module Samsung
RU1890B04UAA RF Module Samsung

Other Datasheets by Ruichips

Part Number Description
RU1H100 N-Channel Advanced Power MOSFET
RU1H130Q N-Channel Advanced Power MOSFET
RU1H130R N-Channel Advanced Power MOSFET
RU1H130S N-Channel Advanced Power MOSFET
RU1H150R N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU1H100R N-Channel Advanced Power MOSFET Features • 100V/75A RDS (ON)=11mΩ(Typ.
Published: |