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RU1HL8L - P-Channel Advanced Power MOSFET

Description

TO252 Applications Power Management DC/DC Converters P-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature

Features

  • -100V/-8A, RDS (ON) =350mΩ(Typ. )@VGS=-10V RDS (ON) =400mΩ(Typ. )@VGS=-4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RU1HL8L
Manufacturer Ruichips
File Size 304.41 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU1HL8L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU1HL8L P-Channel Advanced Power MOSFET Features • -100V/-8A, RDS (ON) =350mΩ(Typ.)@VGS=-10V RDS (ON) =400mΩ(Typ.)@VGS=-4.
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