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RU1HC2H - N-Channel Advanced Power MOSFET

Description

SOP-8 Absolute Maximum Ratings Complementary MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current TA=25°C Mounted on L

Features

  • N-Channel 100V/3.5A, RDS (ON) =75mΩ (Typ. ) @ VGS=10V RDS (ON) =80mΩ (Typ. ) @ VGS=4.5V.
  • P-Channel -100V/-2.5A, RDS (ON) =155mΩ (Typ. ) @ VGS=-10V RDS (ON) =175mΩ (Typ. ) @ VGS=-4.5V.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Available.

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Datasheet Details

Part number RU1HC2H
Manufacturer Ruichips
File Size 349.99 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1HC2H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU1HC2H Complementary Advanced Power MOSFET MOSFET Features • N-Channel 100V/3.5A, RDS (ON) =75mΩ (Typ.) @ VGS=10V RDS (ON) =80mΩ (Typ.) @ VGS=4.5V • P-Channel -100V/-2.5A, RDS (ON) =155mΩ (Typ.) @ VGS=-10V RDS (ON) =175mΩ (Typ.) @ VGS=-4.5V • Reliable and Rugged • ESD Protected • Lead Free and Green Available Applications • Power Management in Notebook Computer.
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