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RU1H7H - N-Channel Advanced Power MOSFET

Description

SOP-8 Applications SMPS Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Cur

Features

  • 100V/6A, RDS (ON) =40mΩ (Typ. ) @ VGS=10V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Available RU1H7H N-Channel Advanced Power MOSFET MOSFET Pin.

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Datasheet Details

Part number RU1H7H
Manufacturer Ruichips
File Size 262.79 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1H7H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • 100V/6A, RDS (ON) =40mΩ (Typ.) @ VGS=10V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available RU1H7H N-Channel Advanced Power MOSFET MOSFET Pin Description SOP-8 Applications • SMPS Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 100 ±20 150 -55 to 150 3.9 ① 24 6 4.7 3.
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