TO-263
Applications
DC-DC Converters
Synchronous Rectifier
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Tempe
Features
100V/32A, RDS (ON) =34mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant)
Pin.
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RU1H36S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/32A, RDS (ON) =34mΩ(Typ.
RU1H36S Datasheet
