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RU1H36R - N-Channel Advanced Power MOSFET

Description

TO-220 Applications DC-DC Converters Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Tempe

Features

  • 100V/32A, RDS (ON) =34mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RU1H36R
Manufacturer Ruichips
File Size 287.37 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1H36R Datasheet

Full PDF Text Transcription (Reference)

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RU1H36R N-Channel Advanced Power MOSFET MOSFET Features • 100V/32A, RDS (ON) =34mΩ(Typ.
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