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SIR341ST3F - Infrared Light Emitting Diode / Top View Type

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Features

  • 1) Compact (φ3.1mm). 2) High efficiency, high output PO=8.4mW (IF=50mA). 3) Wide radiation angle θ 1/2=±16deg. 4) Peak wavelength well suited to silicon detectors (λP=940nm). 5) Good current-optical output linearity. 6) Long life, high reliability. 2.
  • 0.5 Min.24 1 (2.5) 2.5±1 2 Max.1 4.
  • 0.6 5.2±0.3 1.1 1 Anode 2 Cathode !Absolute maximum ratings (Ta = 25°C) Parameter Forward current Reverse voltage Power dissipation Pulse forward current Operating temperature Storage t.

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Datasheet Details

Part number SIR341ST3F
Manufacturer ROHM
File Size 83.08 KB
Description Infrared Light Emitting Diode / Top View Type
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SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. !Applications Optical control equipment Light source for remote control devices !External dimensions (Units : mm) φ3.8±0.3 φ3.5 φ3.1±0.2 Notes: 1. Unspecified tolerance shall be ±0.2. 2. Dimension in parenthesis are show for reference. !Features 1) Compact (φ3.1mm). 2) High efficiency, high output PO=8.4mW (IF=50mA). 3) Wide radiation angle θ 1/2=±16deg.
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