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Data Sheet
4V Drive Nch MOSFET
RP1L080SN
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.
Application Switching
Dimensions (Unit : mm)
MPT6 (Single)
(6) (5) (4)
(1) (2) (3)
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RP1L080SN
Taping TR 1000
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS VGSS
ID IDP *1 IS ISP *1 PD *2 Tch Tstg
60 20 8.0 32 1.6 32 2.