Click to expand full text
Data Sheet
4V Drive Nch MOSFET
RP1L055SN
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6 (Single)
(6) (5) (4)
(1) (2) (3)
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RP1L055SN
Taping TR 1000
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS VGSS
ID IDP *1 IS ISP *1 PD *2
Tch Tstg
60 20 5.5 22 1.6 22 2.0 150 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.