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RLD65MPT7 - Low power red laser diode

Features

  • 1) Glass less structure 2) Low Ith : 20mA (Po=5mW, Tc=25°C) 3) Excellent temperature characteristic Laser chip 0 5.6 +.
  • 0.025 φ1.6 ± 0.1 0.5 min. 3.
  • φ 0.45 ± 0.1 Oprical distance 1.35 ± 0.08 Surmount 0.5max Figure.
  • 2 L. D 1 3 P . D. 2 zAbsolute maximum ratings (Tc=25°C) Parameter Output Reverse voltage Laser PIN photodiode Symbol PO VR VR (PIN) Topr Tstg Limits 7 2 30.
  • 10 to +70.
  • 40 to +85 Unit mW V V °C °C Operating temperature Storage tempe.

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Datasheet Details

Part number RLD65MPT7
Manufacturer ROHM
File Size 90.79 KB
Description Low power red laser diode
Datasheet download datasheet RLD65MPT7 Datasheet
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www.DataSheet4U.com RLD65MPT7 Laser Diodes Low power red laser diode RLD65MPT7 Glass-less structure Red Laser. Low Ith & good temperature characteristics made by suitability of Multi Quantum Well. 1.0 ± 0.1 φ3.6 ± 0.1 3 2 1.2 ± 0.1 2.3 ± 0.5 zFeatures 1) Glass less structure 2) Low Ith : 20mA (Po=5mW, Tc=25°C) 3) Excellent temperature characteristic Laser chip 0 5.6 + − 0.025 φ1.6 ± 0.1 0.5 min. 3 − φ 0.45 ± 0.1 Oprical distance 1.35 ± 0.08 Surmount 0.5max Figure−2 L.D 1 3 P .D. 2 zAbsolute maximum ratings (Tc=25°C) Parameter Output Reverse voltage Laser PIN photodiode Symbol PO VR VR (PIN) Topr Tstg Limits 7 2 30 −10 to +70 −40 to +85 Unit mW V V °C °C Operating temperature Storage temperature 6.5 ± 0.5 φ1.2max φ4.4 + 0 φ2.0 ± 0.
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