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RLD03N06CLE - N-Channel Power MOSFETs

Description

Temperature Dependence of Current Limiting and Switching Speed Performance The RLD03N06CLE, CLESM and RLP03N06CLE are monolithic power devices which incorporate a Logic Level power MOSFET transistor with a current sensing scheme and control circuitry to enable the device to self limit the drain sour

Features

  • 0.30A, 60V.
  • rDS(ON) = 6.0Ω.
  • Built in Current Limit ILIMIT 0.140 to 0.210A at 150oC.
  • Built in Voltage Clamp.
  • Temperature Compensating PSPICE® Model.
  • 2kV ESD Protected.
  • Controlled Switching Limits EMI and RFI.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RLD03N06CLE RLD03N06CLESM RLP03N06CLE.

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Datasheet Details

Part number RLD03N06CLE
Manufacturer Intersil Corporation
File Size 93.44 KB
Description N-Channel Power MOSFETs
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RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet July 1999 File Number 3948.5 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to source voltage clamping offers precision control of the circuit voltage when switching inductive loads. The “Logic Level” gate allows this device to be fully biased on with only 5V from gate to source, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
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