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RB531XN - Schottky Barrier Diode

Features

  • 1) Small mold type. (UMD6) 2) High reliability. K K K (3) (2) (1) (3) (2) (1) 0∼0.1 (4) (5) (6) A A A 0.2 +0.1.
  • 0.05 0.15±0.05 Conditions 1/2 RB531XN Diodes !Electrical characteristic curves (Ta=25°C) 1 10m 1m.

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Datasheet Details

Part number RB531XN
Manufacturer ROHM
File Size 60.98 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB531XN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RB531XN Diodes Schottky barrier diode RB531XN !Applications Rectifying small power !External dimensions (Unit : mm) 2.0±0.2 1.3±0.1 0.65 0.65 0.9±0.1 0.7 0.1Min. 1.25±0.1 2.1±0.1 (4) (5) !Construction Silicon epitaxial planar ROHM : UMD6 EIAJ : SOT-363 JEDEC : !Absolute maximum ratings (Ta=25°C) Parameter DC reverse voltage Mean rectifying current ∗1 Peak forward surge curren ∗2 Junction temperature Storage temperature ∗1 Rating of per diode. ∗2 60Hz for 1 Symbol VR IO IFSM Tj Tstg Limits 30 100 1 125 −40 to +125 Unit V mA A °C °C !Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. − − − Typ. − − − Max. 0.300 0.430 20 Unit V V µA IF=10mA IF=100mA VR=10V Note) Please pay attention to static electricity when handling.
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