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RB531S-30 - Schottky Barrier Diode

Features

  • 1)Ultra small mold type. (EMD2) 2)Low VF 3)High reliability.
  • Construction Silicon epitaxial planer 0.8±0.05 N 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 1.2±0.05 1.6±0.1 0.6 1.7 0.12±0.05 0.8 uy EMD2 B .
  • Structure 0.6±0.1 e.
  • Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 t Tim 00.9.905±±0.005.06 0 Empty pocket 4.0±0.1 2.2.4405±±0.0.015 11..235±0..0066 0 s.
  • Absolute maximum ratings(Ta=25C) Parameter Symbol.

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Datasheet Details

Part number RB531S-30
Manufacturer ROHM
File Size 499.14 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB531S-30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Schottky Barrier Diode RB531S-30 Applications Dimensions(Unit : mm) Land size figure(Unit : mm) General rectification Features 1)Ultra small mold type.(EMD2) 2)Low VF 3)High reliability Construction Silicon epitaxial planer 0.8±0.05 N 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 1.2±0.05 1.6±0.1 0.6 1.7 0.12±0.05 0.8 uy EMD2 B Structure 0.6±0.1 e Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 t Tim 00.9.905±±0.005.06 0 Empty pocket 4.0±0.1 2.2.4405±±0.0.015 11..235±0..
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