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Data Sheet
10V Drive Nch MOSFET
R6010ANX
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5 2.8
Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy.
15.0
12.0
8.0
14.0
2.5
1.3
1.2
0.8
(1) Gate (2) Drain (3) Source
2.54
(1) (2) (3)
2.54
0.75
2.6
Application Switching
Packaging specifications Type R6010ANX Package Code Basic ordering unit (pieces) Bulk 500
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