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R6011ENJ
Nch 600V 11A Power MOSFET
Datasheet
lOutline
VDSS
600V
TO-263S
RDS(on)(Max.)
0.39Ω
SC-83
ID
±11A
LPT(S)
PD
lFeatures
124W
lInner circuit
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Type Tape width (mm) Quantity (pcs)
24 1000
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6011ENJ Unit
Drain - Source voltage Continuous drain current Pulsed drain current
TC = 25°C TC = 100°C
VDSS ID*1 ID*1 IDP*2
600
V
±11
A
±5.