Datasheet4U Logo Datasheet4U.com

BR34E02NUX-3 - DDR2/DDR3 SPD Memory

Download the BR34E02NUX-3 datasheet PDF. This datasheet also covers the BR34E02FVT-3 variant, as both devices belong to the same ddr2/ddr3 spd memory family and are provided as variant models within a single manufacturer datasheet.

Description

BR34E02-3 Series is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)

Features

  • 1) 256×8 bit architecture serial EEPROM 2) Wide operating voltage range: 1.7V-5.5V 3) Two-wire serial interface 4) Self-Timed Erase and Write Cycle 5) Page Write Function (16byte) 6) Write Protect Mode Settable Reversible Write Protect Function: 00h-7Fh Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh 7) Low Power consumption Write (at 1.7V ) : 0.4mA (typ. ) Read (at 1.7V ) : 0.1mA(typ. ) Standby ( at 1.7V ) : 0.1µA(typ. ) 8) DATA security Write protect feature (W.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BR34E02FVT-3_Rohm.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BR34E02NUX-3
Manufacturer ROHM
File Size 486.61 KB
Description DDR2/DDR3 SPD Memory
Datasheet download datasheet BR34E02NUX-3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Memory for Plug & Play DDR2/DDR3 SPD Memory (for Memory Modules) BR34E02FVT-3,BR34E02NUX-3 ●Description BR34E02-3 Series is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM 2) Wide operating voltage range: 1.7V-5.5V 3) Two-wire serial interface 4) Self-Timed Erase and Write Cycle 5) Page Write Function (16byte) 6) Write Protect Mode Settable Reversible Write Protect Function: 00h-7Fh Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh 7) Low Power consumption Write (at 1.7V ) : 0.4mA (typ.) Read (at 1.7V ) : 0.1mA(typ.) Standby ( at 1.7V ) : 0.1µA(typ.
Published: |