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BR34E02FVT-3 - DDR2/DDR3 SPD Memory

Description

BR34E02-3 Series is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)

Features

  • 1) 256×8 bit architecture serial EEPROM 2) Wide operating voltage range: 1.7V-5.5V 3) Two-wire serial interface 4) Self-Timed Erase and Write Cycle 5) Page Write Function (16byte) 6) Write Protect Mode Settable Reversible Write Protect Function: 00h-7Fh Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh 7) Low Power consumption Write (at 1.7V ) : 0.4mA (typ. ) Read (at 1.7V ) : 0.1mA(typ. ) Standby ( at 1.7V ) : 0.1µA(typ. ) 8) DATA security Write protect feature (W.

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Datasheet Details

Part number BR34E02FVT-3
Manufacturer ROHM
File Size 486.61 KB
Description DDR2/DDR3 SPD Memory
Datasheet download datasheet BR34E02FVT-3 Datasheet

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Other Datasheets by ROHM

Part Number Description
BR34E02FVT-W Based on Serial Presence Detect 2Kbit(256X8bit) Serial EEPROM
BR34E02NUX-3 DDR2/DDR3 SPD Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Memory for Plug & Play DDR2/DDR3 SPD Memory (for Memory Modules) BR34E02FVT-3,BR34E02NUX-3 ●Description BR34E02-3 Series is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM 2) Wide operating voltage range: 1.7V-5.5V 3) Two-wire serial interface 4) Self-Timed Erase and Write Cycle 5) Page Write Function (16byte) 6) Write Protect Mode Settable Reversible Write Protect Function: 00h-7Fh Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh 7) Low Power consumption Write (at 1.7V ) : 0.4mA (typ.) Read (at 1.7V ) : 0.1mA(typ.) Standby ( at 1.7V ) : 0.1µA(typ.
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