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RMLV0416EGBG - 4Mb Advanced LPSRAM

Download the RMLV0416EGBG datasheet PDF. This datasheet also covers the RMLV0416E variant, as both devices belong to the same 4mb advanced lpsram family and are provided as variant models within a single manufacturer datasheet.

Description

The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies.

The RMLV0416E Series has realized higher density, higher performance and low power consumption.

Features

  • Single 3V supply: 2.7V to 3.6V.
  • Access time: 45ns (max. ).
  • Current consumption: ── Standby: 0.3µA (typ. ).
  • Equal access and cycle times.
  • Common data input and output ── Three state output.
  • Directly TTL compatible ── All inputs and outputs.
  • Battery backup operation Orderable part number information Orderable part number Access time Temperature range Package Shipping container RMLV0416EGSB-4S2#AA.
  • RMLV0416EGSB-4S2#HA.
  • RML.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RMLV0416E-Renesas.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RMLV0416E Series 4Mb Advanced LPSRAM (256-kword × 16-bit) R10DS0205EJ0300 Rev.3.00 2021.8.18 Description The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array. Features • Single 3V supply: 2.7V to 3.6V • Access time: 45ns (max.) • Current consumption: ── Standby: 0.3µA (typ.
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