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RMLV0414EGSB - 4Mb Advanced LPSRAM

Download the RMLV0414EGSB datasheet PDF. This datasheet also covers the RMLV0414E variant, as both devices belong to the same 4mb advanced lpsram family and are provided as variant models within a single manufacturer datasheet.

Description

The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies.

The RMLV0414E Series has realized higher density, higher performance and low power consumption.

Features

  • Single 3V supply: 2.7V to 3.6V.
  • Access time: 45ns (max. ).
  • Current consumption: ── Standby: 0.3µA (typ. ).
  • Equal access and cycle times.
  • Common data input and output ── Three state output.
  • Directly TTL compatible ── All inputs and outputs.
  • Battery backup operation Orderable part number information Part name Access time Temperature range RMLV0414EGSB-4S2#AA.
  • RMLV0414EGSB-4S2#HA.
  • 45 ns -40 ~ +85°C Package 400-mil 44pin pl.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RMLV0414E-Renesas.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RMLV0414E Series 4Mb Advanced LPSRAM (256-kword × 16-bit) R10DS0216EJ0300 Rev.3.00 2021.8.18 Description The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0414E Series has realized higher density, higher performance and low power consumption. The RMLV0414E Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II). Features • Single 3V supply: 2.7V to 3.6V • Access time: 45ns (max.) • Current consumption: ── Standby: 0.3µA (typ.
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