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RJK60S7DPP-E0 - 600V - 30A - SJ MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

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Features

  • Superjunction MOSFET.
  • Low on-resistance RDS(on) = 0.1  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C).
  • High speed switching tf = 9 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 , Rg = 10 , Ta = 25C) R07DS0643EJ0300 Rev.3.00 Dec 10, 2012 Outline.

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Preliminary Datasheet RJK60S7DPP-E0 600V - 30A - SJ MOS FET High Speed Power Switching Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.1  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 9 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 , Rg = 10 , Ta = 25C) R07DS0643EJ0300 Rev.3.00 Dec 10, 2012 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D G 1. Gate 2. Drain 3.
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