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RJK4532DPD - N-Channel Power MOSFET

Description

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Features

  • Low on-state resistance RDS(on) = 1.9  typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C).
  • Low drive current.
  • High speed switching R07DS0682EJ0100 Rev.1.00 Feb 24, 2012 Outline.

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Full PDF Text Transcription

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Preliminary Datasheet RJK4532DPD 450V - 4A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.9  typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C)  Low drive current  High speed switching R07DS0682EJ0100 Rev.1.00 Feb 24, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2.
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