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RJK4002DPD - MOSFET

Description

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Features

  • Low on-state resistance RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C).
  • Low drive current.
  • High speed switching Outline.

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Full PDF Text Transcription

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RJK4002DPD 400V - 3A - MOS FET High Speed Power Switching Features • Low on-state resistance RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C) • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 12 3 G Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID (pulse) Note1 IDR IDR Note1 (pulse) IAP Note2 EAR Note2 Pch Note3 Channel to case thermal Impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. Pulse width limited by safe operating area. 2.
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