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RJK4018DPK - High Speed Power Switching

Description

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Features

  • Low on-resistance RDS(on) = 0.085  typ. (at ID = 21.5 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching R07DS0215EJ0200 (Previous: REJ03G1490-0100) Rev2.00 Dec 03, 2010 Outline.

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Datasheet Details

Part number RJK4018DPK
Manufacturer Renesas
File Size 100.57 KB
Description High Speed Power Switching
Datasheet download datasheet RJK4018DPK Datasheet

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Full PDF Text Transcription

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Preliminary Datasheet RJK4018DPK Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.085  typ. (at ID = 21.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0215EJ0200 (Previous: REJ03G1490-0100) Rev2.00 Dec 03, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.
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