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RJH60M3DPE - IGBT

Features

  • Short circuit withstand time (8 s typ. ).
  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode (100 ns typ. ) in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0533EJ0100 Rev.1.00 Sep 02, 2011 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJH60M3DPE 600 V - 17 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0533EJ0100 Rev.1.00 Sep 02, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E www.DataSheet.net/ 1. Gate 2. Collector 3. Emitter 4.
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