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RJH60M1DPP-M0 - IGBT

Description

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Features

  • Short circuit withstand time (8 s typ. ).
  • Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode (75 ns typ. ) in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJH60M1DPP-M0 600V - 8A - IGBT Application: Inverter R07DS0528EJ0300 Rev.3.00 May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (75 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C 1 23 1. Gate 2. Collector G 3.
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