Datasheet4U Logo Datasheet4U.com

RBE039N15R1SZQ4 - 150V 190A N-Channel Power MOSFET

Description

The RBE039N15R1SZQ4 N-channel power MOSFET

Features

  • REXFET-1 split-gate technology and is offered in a TOLL package. The TOLL package features top-side cooling for ultra-compact and optimal thermal performance. Renesas' REXFET-1 split gate technology is suitable for.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RBE05SM20A Schottky Barrier Diode Rohm
RBE05VM20A Schottky Barrier Diode Rohm
RBE07V20A Schottky Barrier Diode Rohm
RBE1KA20A Schottky Barrier Diode Rohm
RBE1VA20A Schottky Barrier Diode Rohm

Other Datasheets by Renesas

Part Number Description
RBE039N15R1SZPW 150V 190A N-Channel Power MOSFET
RBE015N10R1SZPV 100V 340A N-Channel Power MOSFET
RBE015N10R1SZQ4 100V 340A N-Channel Power MOSFET
RBE029N10R1SZN6 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RBE039N15R1SZQ4 REXFET-1 N-Channel Power MOSFET 150 V - 190 A - 3.9 mΩ - TOLL Datasheet Description The RBE039N15R1SZQ4 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLL package. The TOLL package features top-side cooling for ultra-compact and optimal thermal performance. Renesas' REXFET-1 split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications. Features  Standard level gate drive voltage: VGS(th) = 2.2 to 3.7 V  Super low on-state resistance: RDS(on) = 3.9 m MAX.
Published: |