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RBE039N15R1SZPW - 150V 190A N-Channel Power MOSFET

Description

The RBE039N15R1SZPW N-channel power MOSFET

Features

  • REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for ultra-compact and optimal thermal performance. Renesas' REXFET-1 split gate technology is suitable for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RBE039N15R1SZPW REXFET-1 N-Channel Power MOSFET 150 V - 190 A - 3.9 mΩ - TOLT Datasheet Description The RBE039N15R1SZPW N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for ultra-compact and optimal thermal performance. Renesas' REXFET-1 split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications. Features  Standard level gate drive voltage: VGS(th) = 2.2 to 3.7 V  Super low on-state resistance: RDS(on) = 3.9 m MAX.
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