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RBE015N10R1SZQ4 - 100V 340A N-Channel Power MOSFET

Description

The RBE015N10R1SZQ4 N-channel power MOSFET

Features

  • REXFET-1 split-gate technology and is offered in a TOLL package. The TOLL package features top-side cooling for ultra-compact and optimal thermal performance. Renesas' REXFET-1 split gate technology is suitable for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RBE015N10R1SZQ4 REXFET-1 N-Channel Power MOSFET 100 V - 340 A - 1.5 mΩ - TOLL Datasheet Description The RBE015N10R1SZQ4 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLL package. The TOLL package features top-side cooling for ultra-compact and optimal thermal performance. Renesas' REXFET-1 split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications. Features • Standard level gate drive voltage: VGS(th) = 2.0 to 4.0 V • Super low on-state resistance: RDS(on) = 1.5 m Max.
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