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RBE015N10R1SZPV
REXFET-1 N-Channel Power MOSFET 100 V - 340 A - 1.5 mΩ - TOLG
Datasheet
Description
The RBE015N10R1SZPV N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLG package. The TOLG package has a similar profile and footprint to the TOLL package, but with the benefits of gullwing leads for high thermal cycling capability. Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Features
• Standard level gate drive voltage: VGS(th) = 2.0 to 4.0 V • Super low on-state resistance: RDS(on) = 1.5 m Max.
RBE015N10R1SZPV Datasheet
