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RBC30A65B1UFWA - Fast Recovery Diode

Description

and application examples.

Features

  • Forward voltage: VF = 1.7 V typ. (at IF = 30 A).
  • High speed switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RBC30A65B1UFWA 650V - 30A - Fast Recovery Diode Features  Forward voltage: VF = 1.7 V typ. (at IF = 30 A)  High speed switching  Applications: UPS, Welding, photovoltaic inverters, Power converter system  Unsawn wafer Wafer size = 200 mm  Quality grade: Standard Datasheet R07DS1505EJ0120 Rev.1.20 Oct.18th.2024 Key performance Product name RBC30A65B1UFWA VR 650 V IF 30 A Die size 10.628 mm2 (3.26 mm x 3.26 mm) Package Unsawn wafer Outline 1 Die 1 Wafer 2 2 1. Cathode (The back) 2. Anode Mechanical parameter Die size Area total Thickness Wafer size Passivation front side Pad metal Backside metal 3.26 x 3.26 10.628 0.077 typ. 193.9 Polyimide AlSi – 5.2 m Ni/Au mm mm2 mm mm R07DS1505EJ0120 Rev.1.20 Oct.18th.
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