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RBC200A170L2GWA - Fast Recovery Diode

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

  • Low forward voltage VF = 1.75 V typ. (at IF = 200 A, Tj = 25 C).
  • Fast recovery (soft recovery).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RBC200A170L2GWA 1700V - 200A - Fast Recovery Diode Features  Low forward voltage VF = 1.75 V typ. (at IF = 200 A, Tj = 25 C)  Fast recovery (soft recovery)  Application: Inverter  Unsawn wafer Wafer size: 200 mm  Quality grade: Standard Datasheet R07DS1514EJ0110 Rev.1.10 Oct.18th.2024 Key performance Product name RBC200A170L2GWA VR 1700 V IF 200 A Die size 98.56 mm2 (8.8 mm x 11.20 mm) Package Unsawn wafer Outline Die 1 Wafer 1 2 2 1. Cathode (The back) 2. Anode Mechanical Parameters Die size Area total Thickness Wafer size Passivation front side Pad metal Backside metal 8.8 x 11.20 98.56 0.195 typ. 193.9 Polyimide AlSi – 5.5 m Ni/Au mm mm2 mm mm R07DS1514EJ0110 Rev.1.10 Oct.18th.
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