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NP89N055PUK - MOS FIELD EFFECT TRANSISTOR

Description

The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A).
  • Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Datasheet Details

Part number NP89N055PUK
Manufacturer Renesas
File Size 105.99 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP89N055PUK Datasheet

Full PDF Text Transcription

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Preliminary Data Sheet NP89N055PUK MOS FIELD EFFECT TRANSISTOR R07DS0569EJ0100 Rev.1.00 Nov 17, 2011 Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
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