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NP89N04PDK - N-Channel Power MOSFET

Description

The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A).
  • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V).
  • Logic level drive type.
  • Designed for automotive.

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Full PDF Text Transcription

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NP89N04PDK 40 V – 90 A – N-channel Power MOS FET Application: Automotive Preliminary Data Sheet R07DS1016EJ0200 Rev.2.00 May 24, 2018 Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
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