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K3155. For precise diagrams, and layout, please refer to the original PDF.
2SK3155 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven f...
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mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1080-0500 (Previous: ADE-208-768C) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.5.00 Sep 07, 2005 page 1 of 7 2SK3155 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
K3155 Datasheet
