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K3141. For precise diagrams, and layout, please refer to the original PDF.
2SK3141 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven fr...
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4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G REJ03G1070-0400 (Previous: ADE-208-680B) Rev.4.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK3141 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
K3141 Datasheet
