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HIP0061 - 3-Transistor Common Source ESD Protected Power MOSFET Array

Description

The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration.

Features

  • Three 3.5A Power MOS N-Channel Transistors.
  • Output Voltage to 60V.
  • rDS(ON).
  • . 0.225 Max Per Transistor at VGS = 10V.
  • Pulsed Current.
  • 10A Each Transistor.
  • Avalanche Energy.
  • . 100mJ Each Transistor.
  • Grounded Tab Eliminates Heat Sink Isolation.

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Datasheet Details

Part number HIP0061
Manufacturer Renesas
File Size 528.22 KB
Description 3-Transistor Common Source ESD Protected Power MOSFET Array
Datasheet download datasheet HIP0061 Datasheet

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Full PDF Text Transcription

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DATASHEET HIP0061 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array FN3982 Rev 0.00 December 1997 Features • Three 3.5A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON). . . . . . 0.225 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 10A Each Transistor • Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor • Grounded Tab Eliminates Heat Sink Isolation Applications • Automotive • Appliance • Industrial Control • Robotics • Relay, Solenoid, Lamp Drivers Ordering Information TEMP. PART NUMBER RANGE (oC) PACKAGE PKG. NO. HIP0061AS1 -40 to 125 7 Ld Staggered Vertical SIP Z7.05C HIP0061AS2 -40 to 125 7 Ld Gullwing SIP Z7.
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