C3518-Z - SILICON POWER TRANSISTOR

Description

The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.

Features

High DC Current Gain hFE = 100 to 400.
Low VCE(sat): VCE(sat) = 0.09 V TYP.
Complement to 2SA1385-Z.

Renesas

📥 Download Datasheet

Datasheet Details

Part number	C3518-Z
Manufacturer	Renesas
File Size	705.80 KB
Description	SILICON POWER TRANSISTOR
Datasheet	C3518-Z Datasheet
Additional preview pages of the C3518-Z datasheet.

📁 Similar Datasheet

C3514 - 2SC3514 (Inchange Semiconductor)
C3515 - 2SC3515 (Toshiba)
C3519 - 2SC3519 (Mospec Semiconductor)
C350 - Phase Control SCR (Powerex Power Semiconductors)
C3500 - Silicon Power Transistor (ETC)
C3502 - 2SC3502 (Sanyo Semicon Device)
C3503 - 2SC3503 (Sanyo Semicon Device)
C3504 - 2SC3504 (Sanyo Semicon Device)
C3505 - 2SC3505 (SavantIC)
C3506 - Silicon NPN Transistor (Panasonic)

Other Datasheets by Renesas

C3554 - 2SC3554

Full PDF Text Transcription

Click to expand full text

DATA SHEET SILICON POWER TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current (DC) Collector Current (pulse) Note 1 Total Power Dissipation (TA = 25°C) Note 2 IC(DC) IC(pulse) PT Junction Temperature Tj Storage Temperature Tstg 60 60 7 5 7 2.0 150 −55 to +150 V V V A A W °C °C PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 1.

Published: Nov 24, 2014 |