C3514 - 2SC3514

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Good Linearity of hFE Complement to Type 2SA1383 APPLICATIONS Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Em

Inchange Semiconductor

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Datasheet Details

Part number	C3514
Manufacturer	Inchange Semiconductor
File Size	103.66 KB
Description	2SC3514
Datasheet	C3514 Datasheet
Additional preview pages of the C3514 datasheet.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3514 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 APPLICATIONS ·Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Collector Power Dissipation@TC=25℃ 10 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.

Published: Dec 26, 2016 |