Datasheet4U Logo Datasheet4U.com

2SC4807 - Silicon NPN Transistor

Features

  • High gain bandwidth product fT = 4.4 GHz Typ.
  • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Outline.

📥 Download Datasheet

Datasheet Details

Part number 2SC4807
Manufacturer Renesas
File Size 166.75 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC4807 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4807 NPN TRANSISTOR Hitachi Semiconductor
2SC4807 Silicon NPN Transistor Inchange Semiconductor
2SC4800 (2SC4800 - 2SC4803) Power Bipolar Transistors ETC
2SC4801 (2SC4800 - 2SC4803) Power Bipolar Transistors ETC
2SC4802 (2SC4800 - 2SC4803) Power Bipolar Transistors ETC

Other Datasheets by Renesas

Part Number Description
2SC4050 NPN Transistor
2SC4226 NPN Silicon RF Transistor
2SC4308 Silicon NPN Transistor
2SC4331 SILICON POWER TRANSISTOR
2SC4331-Z SILICON POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
2SC4807 Silicon NPN Epitaxial REJ03G0731-0300 (Previous ADE-208-1122A) Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 Note: Marking is “ER”. 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current Collector power dissipation IC PC*1 Junction temperature Tj Storage temperature Tstg Note: 1. Value on the alumina ceramics board (12.
Published: |