Datasheet4U Logo Datasheet4U.com

2SC4807 - Silicon NPN Transistor

Description

fT= 4.4 GHz TYP.

1 dB Power compression point Pcp = 24 dBm TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designe

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4807 NPN TRANSISTOR Hitachi Semiconductor
2SC4807 Silicon NPN Transistor Renesas
2SC4800 (2SC4800 - 2SC4803) Power Bipolar Transistors ETC
2SC4801 (2SC4800 - 2SC4803) Power Bipolar Transistors ETC
2SC4802 (2SC4800 - 2SC4803) Power Bipolar Transistors ETC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC4806 Silicon NPN Power Transistor
2SC4001 Silicon NPN Power Transistor
2SC4003 Silicon NPN Power Transistor
2SC4005 Silicon NPN Transistor
2SC4007 Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4807 DESCRIPTION ·High Gain-Bandwidth Product fT= 4.4 GHz TYP. ·High Output Power 1 dB Power compression point Pcp = 24 dBm TYP. @ VCE = 5V , IC = 100 mA , f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF ~ UHF wide band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.2 A 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
Published: |